When preparing your CIF for deposition please include as much information as possible and check it carefully. This is especially true for CSD Communications where there is no paper to describe the chemistry and experimental details leading to your structure. If you choose to publish your data as a CSD Communication please remember to provide all the authors/crystallographers/chemists who contributed to the crystallographic experiment as authors of the data. The co-authors of a CSD Communication should be all those persons who have made significant scientific contributions to the work reported, including the ideas and their execution, and who share responsibility and accountability for the results.
Suggested contributors that could be included as authors include:
- Data Collection/Data solution/Refinement Scientist
- Synthetic Chemist
- Recrystallisation Scientist
- Principal Investigator/Supervisor
By publishing data as a CSD Communication you are also certifying that you are the owner of the data and your contribution is your original work; that all authors concur with and are aware of the submission; and that all workers involved in the study are listed as authors and given proper credit.
If we are unable to validate your structure from the information you have provided we may contact you. If we cannot resolve the issue, unfortunately, we may not be able to add your structure to the CSD.
Guidelines in Chinese
All experimental CIF files (including those from powder diffraction experiments) should contain an R-factor. This should be consistent with the crystallography being performed correctly and to the best ability that would be expected from the material and equipment used. We prefer single block CIF files and would like all experimental CIFs to contain:
- R-factors (R1, wR2, Rint)
- Shift/ESD (to show that the refinement has converged)
- Explanation of any problems with numbers of reflections and parameters
- Any residual electron density
- Details of squeeze/solvent masking
- Atomic Displacement Parameter (ADP) values
- Temperature – cell and data collection temperatures match
- Experimental set up including mounting device and instrument type
- HKL included
- RES included
We would encourage you to take advantage of the IUCr checkCIF reports built in to the deposition page. This can highlight issues to check with your structure that can be clarified in the validation reply form, particularly in the case of A- or B- level alerts. Ideally, treatment of disorder or partial occupancy atoms should be clear and of course, no non-positive definite atoms!
To allow us to create the most accurate representation of your structure please provide as much additional information on the “Enhanced Data” page as is appropriate for your structure. Some chemical issues we commonly encounter when processing data into the CSD are:
- Given formula and crystal formula don’t agree. Particular attention should be paid to hydrogen atoms which may not be located in the experiment. It would be very helpful to us to have a complete moiety formula (including unlocated hydrogens and any SQUEEZE/MASK species not located, if known)
- Charge balance, particularly for variable metal oxidation states and radicals
- Missing hydrogen atoms, especially on oxygen atoms that could be hydroxy/oxy/aqua ligands and for polyoxometalate structures
- Unusual bonding, tautomers or metal-metal bonding
- Poorly handled or unmodelled disorder
- Unexplained void space not accounted for by SQUEEZE or MASK procedures
Further information that will benefit the users of your structure and that will enable the correct identification of any previous versions of your structure are:
- Stereochemical determination method, if relevant
- Crystallisation solvent/conditions
- Melting point
- Details of re-refinement – please tell us if the structure is a re-refined version of an existing CSD entry.
- Refcodes or CCDC numbers of any known related structures; i.e. by temperature / stereochemistry/ pressure; e.g. “high temperature determination of REFCODE”
If you have any further queries, please contact us via our Enquiries Page.